| PART |
Description |
Maker |
| IGW50N65H5 IGW50N65H5-15 |
650V IGBT high speed switching series fifth generation
|
Infineon Technologies A...
|
| IKA15N65H5 PG-TO220-3-FP |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| PG-TO220-3 IKP08N65F5 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
|
| IGZ75N65H5 |
650V IGBT high speed series fifth generation
|
Infineon Technologies A...
|
| BUP200D Q67040-A4420-A2 BUP200-D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free) 3.6 A, 1200 V, N-CHANNEL IGBT, TO-220AB
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-SOIC -55 to 125 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流闭锁免费
From old datasheet system
IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| IXGN50N120C3H1 |
High-Speed PT IGBT for 20-50 kHz Switching
95 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| 10-FY074PA050SM-M582F38 |
650V IGBT H5 and 650V Stealth Si diode
|
Vincotech
|
| SGL60N90D |
IGBT CO-PAK (High Speed Switching Low Saturation Voltage High Input Impedance)
|
FAIRCHILD[Fairchild Semiconductor]
|
